# Problem 2: pn Reverse Breakdown Consider a p*n Si step junction diode with n-side doping Np= 1017 cm

Problem 2: pn Reverse Breakdown Consider a p*n Si step junction diode with n-side doping Np= 1017 cm3 and T= 300K: Calculate the breakdown voltage VBR, assuming that the critical electric field Ecr = 7×105 V/cm. b) Calculate the depletion width at the breakdown voltage c) What is the dominant breakdown mechanism? Explain briefly. d) How would VBr change if the temperature were to be increased? Explain briefly a