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GDB of PHY-301 open date 28th July 2016 at 12:00am and close date 29th July 2016 at 11:59pm

The topic is:

 “By increasing the reverse biase value to a P-N junction, breakdown occurs. On which factor of P-N junction breakdown depends. What phenomenon will occur in case of heavily doped and lightly doped junction, by increasing reverse voltage".

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Replies to This Discussion

When a diode is reverse biased the positive terminal is connected to the n side of the junction and the negative terminal is connected the p junction. This results in the drawing of electrons towards the n junction and holes towards the p junction. Now there are some minority carriers which are present in the diode which conduct electricity in the range of micro amperes. Now if we increase the voltage the bonds near the junction starts breaking off which produces large number number of electron hole pairs which suddenly increases the current output. Hence the diode behaves like an ordinary conductor. This is called as breakdown. Now there are two ways to breakdown which are zener breakdown and avalanche breakout. Both of have the same mechanism of breakdown but they occur in two different types of diodes. Zener breakdown occurs in heavily doped diodes with small depletion layer whereas avalanche breakdown occurs in moderately doped diodes with larger depletion layer.

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